features ? very low feedback capacitance ? low current ? low volt age applications ? if and vhf applications in thick and thin - film circuits marking: g11 m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage 30 v v ceo collector - emitter voltage 20 v v ebo emitter - base voltage 4 v i c collector current 25 m a p c collector power dissipation 250 m w r ja thermal resistance from j u n ction to a mbient 500 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltage v ( br) cbo i c = 1 00 a, i e =0 30 v collector - emitter breakdown voltage v (br) c e o i c = 0.1 ma, i b =0 20 v emitter - base breakdown voltage v (br)eb o i e = 10 0 a , i c =0 4 v collector cut - off current i cbo v cb = 2 0 v, i e =0 0.1 a collector cut - off current i c e o v c e = 15 v , i b =0 0.1 a emitter cut - off current i ebo v eb = 4 v, i c =0 0.1 a dc current gain h fe v ce = 10 v, i c = 7m a 40 120 collector - emitter saturation voltage v ce(sat) i c = 10 ma, i b = 1 ma 0.3 v b ase - emitter voltage v b e v ce = 10 v, i c = 7m a 0.9 v transition frequency f t v ce = 10 v,i c = 5 ma , f=1 00 mhz 275 mhz collector output capacitance c ob v cb = 10 v, i e =0, f=1mhz 1 pf 1. base 2. emitter 3. collector so t C 23 BFS20 transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu
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